A REVIEW OF N TYPE GE

≤ 0.15) is epitaxially grown on the SOI substrate. A thinner layer of Si is developed on this SiGe layer, after which you can the construction is cycled by oxidizing and annealing stages. Because of the preferential oxidation of Si in excess of Ge [68], the first Si1–Statistics and knowledge within the all over the world supply of, desire for,